GHOPTO
Custom Foundry Services

Custom Foundry Services

GHOPTO offers professional IIV device fabrication services through its Taiyuan Shanxi China laboratories. These facilities include 1400 square meters of clean rooms (class 100 to class 10000) for wafer fabrication, chip packaging and device testing. GHOPTO's engineering can take your optoelectronics fabrication needs from process design, through development stages, and all the way to commercial production in-house.

Standard InGaAs Imagers
Products lines of lattice matched Short-Wave-InfraRed (SWIR) Indium-Gallium-Arsenide (InGaAs) technology. This portfolio includes SWIR and VISIBLE-SWIR linear arrays, focal plane arrays, and cameras.


✔  Lattice Matched InGaAs Sensor and Camera Production

✔  15, 25, and 30 um Pitch

✔  Characterization

Custom IR Imagers
Custom ROIC and epitaxy integration, new imaging technologies such as APD, and T2SL FPAs.


✔  Characterization

✔  TAR* and ITAR*-free Production Advanced Technologies such as Lattice Mismatched InGaAs, APD, QWIP and T2SL

Foundry Services
1300 square meters of clean rooms (class 100 to class 100,000) dedicated to wafer fabrication, chip packaging and device testing.


✔  Full Wafer Fabrication (up to 4 inch) and Production

✔  Device Processing and Chip Packaging

✔  Characterization

WAFER FABRICATION SERVICES (12 mm x 12 mm and larger pieces; 2”, 3”, and 4” wafers)

OPTICAL CONTACT LITHOGRAPHY

INDUCTIVELY COUPLED PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (ICP-PECVD) of dielectrics

E-BEAM and THERMAL EVAPORATION of a variety of metals

SPUTTERING DEPOSITION of OXIDES AND METALS

RAPID THERMAL PROCESSING

INDUCTIVELY COUPLED PLASMA REACTIVE ION ETCHING (ICP-RIE) of III-V materials

REACTIVE ION ETCHING of dielectric materials

WET ETCHING

LAPPING and POLISHING

METROLOGY for in process controls

WAFER PROBING

FE-SEM

SURFACE PROFILOMETER

NANO-SPECTROMETER

STRESS MEASUREMENT EQUIPMENT



STRESS MEASUREMENT EQUIPMENT

CHIP CLEAVING

FLIP-CHIP BONDING

WIRE-BONDING



CHARACTERIZATION

SEMICONDUCTOR ELECTRICAL PROPERTIES

DEVICE IV MEASUREMENTS

ELECTRO-SPECTRAL PROPERTIES of OPTOELECTRONIC DEVICES

ROOM TEMPERATURE EPI-LAYER FTIR ABSORPTION MEASUREMENTS

SPECTRAL RESPONSE, RESPONSIVITY, DETECTIVITY (D*), and NEDT