GHOPTO offers professional III-V device fabrication services through its Taiyuan Shanxi China laboratories. These facilities include 1300 square meters of clean rooms (class 100 to class 100,000) for wafer fabrication, chip packaging and device testing. GHOPTO's engineering can take your optoelectronics fabrication needs from process design, through development stages, and all the way to commercial production in-house.
✔ Lattice Matched InGaAs image sensor and Camera Production
✔ 15, 25, and 30 um Pitch
✔ Characterization
✔ Characterization
✔ TAR* and ITAR*-free Production Advanced Technologies such as Lattice Mismatched InGaAs, APD, QWIP and T2SL
✔ Full Wafer Fabrication (up to 4 inch) and Production
✔ Device Processing and Chip Packaging
✔ Characterization
WAFER FABRICATION SERVICES (12 mm x 12 mm and larger pieces; 2”, 3”, and 4” wafers) |
·OPTICAL CONTACT LITHOGRAPHY |
·INDUCTIVELY COUPLED PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (ICP-PECVD) of dielectrics |
·E-BEAM and THERMAL EVAPORATION of a variety of metals |
·SPUTTERING DEPOSITION of OXIDES AND METALS |
·RAPID THERMAL PROCESSING |
·INDUCTIVELY COUPLED PLASMA REACTIVE ION ETCHING (ICP-RIE) of III-V materials |
·REACTIVE ION ETCHING of dielectric materials |
·WET ETCHING |
·LAPPING and POLISHING |
·METROLOGY for in process controls ·WAFER PROBING ·FE-SEM ·SURFACE PROFILOMETER ·NANO-SPECTROMETER ·STRESS MEASUREMENT EQUIPMENT |
STRESS MEASUREMENT EQUIPMENT |
·CHIP CLEAVING |
·FLIP-CHIP BONDING |
·WIRE-BONDING |
CHARACTERIZATION |
·SEMICONDUCTOR ELECTRICAL PROPERTIES |
·DEVICE IV MEASUREMENTS |
·ELECTRO-SPECTRAL PROPERTIES of OPTOELECTRONIC DEVICES ·ROOM TEMPERATURE EPI-LAYER FTIR ABSORPTION MEASUREMENTS |
·SPECTRAL RESPONSE, RESPONSIVITY, DETECTIVITY (D*), and NEDT |
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